Properties of iron related quenched-in levels in p-silicon

Indusekhar, H and Kumar, V (1986) Properties of iron related quenched-in levels in p-silicon. In: Physica Status Solidi A-Applied Research, 95 (1). 269 -278.

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Abstract

The electrical and optical properties of the thermally induced quenched-in levels in p-silicon which have heen attributed to iron are studied. The two levels, HI and H2, are located at Ev + 0.42 eV and Ev + 0.52 eV, respectively, as determined by TSCAP, DLTS, and transient photocapacitance methods. The photoionization cross sections are well described by Lucovsky's model. The hole capture by H1 is temperature dependent; a barrier of 40 meV is measured. However, multiphonon emission mechanism cannot be invoked to explain this temperature dependence due to the inferred zero lattice relaxation. The source of iron contamination is found to be the ambient conditions, in particular the quartz tube. The conflicting reports regarding the stability and the variation in the reported capture cross section values suggests that the observed Ev + 0.4 eV level must be a complex centre. The inferred near zero lattice relaxation during the electron transition implies weak coupling to the host lattice.

Item Type:	Journal Article
Publication:	Physica Status Solidi A-Applied Research
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	10 Feb 2010 05:46
Last Modified:	19 Sep 2010 05:36
URI:	http://eprints.iisc.ac.in/id/eprint/21233

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