ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

On the structural features of doped amorphous chalcogenide semiconductors

Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) On the structural features of doped amorphous chalcogenide semiconductors. In: Journal of Non-Crystalline Solids, 86 (1-2). pp. 65-71.

[img] PDF
http___www.sciencedirect.com_science__ob=MImg&_imagekey=B6TXM-48J4YS8-GK-1&_cdi=5594&_user=512776&_orig=search&_coverDate=09_30_1986&_sk=999139998&view=c&wchp=dGLzVtz-zSkzV&md5=8ff518c9e543726044.pdf - Published Version
Restricted to Registered users only

Download (309kB) | Request a copy
Official URL: http://www.sciencedirect.com/science?_ob=ArticleUR...


A study of Bi-doped amorphous (Ge42S58)100−xBix and Ge20S80−xBix has been carried out by differential thermal analysis (DTA) and X-ray diffraction methods so as to elucidate the impurity-induced modifications in the semiconductors. Thermal analysis reveals the presence of complex structural units in the modified material. An interesting feature of this study is the existence of a double glass transition in Ge20S80−xBix, which is reported for the first time in this system.

Item Type: Journal Article
Publication: Journal of Non-Crystalline Solids
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 05 Feb 2010 09:51
Last Modified: 19 Sep 2010 05:35
URI: http://eprints.iisc.ac.in/id/eprint/20944

Actions (login required)

View Item View Item