Effect of pressure on the electrical resistivity of indium sulphide

Madhava, MR and Bandyopadhyay, AK and Bhat, HL (1981) Effect of pressure on the electrical resistivity of indium sulphide. In: Journal of Materials Science, 16 (09). pp. 2617-2619.

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Abstract

Indium sulphide (INS) is a III-VI compound semiconductor and crystallizes in the orthorhombic structure with a space group D~(Pmnn). The lattice parameters at room temperature and atmospheric pressure are: a = 3.944 A, b = 4.447 A and c= 10.648#, [1, 2]. The crystal structure comprises an ethane-like SalnlnS3 atomic arrangement;the SalnInS3 groups are mutually linked by sharing S corners and form a three-dimensional network.

Item Type:	Journal Article
Publication:	Journal of Materials Science
Publisher:	Springer
Additional Information:	Copyright of this article belongs to Springer
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	15 Jul 2009 06:19
Last Modified:	19 Sep 2010 05:34
URI:	http://eprints.iisc.ac.in/id/eprint/20706

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