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Depth profile composition studies of thin film CdS: Cu,S solar cells using XPS and AES

Bhid, VG and Salkalachen, Saji and Rastog, AC and Rao, CNR and Hegde, MS (1981) Depth profile composition studies of thin film CdS: Cu,S solar cells using XPS and AES. In: Journal Of Physics D-Applied Physics, 14 (9). p. 1647.

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Surface composition and depth profile studies of hemiplated thin film CdS:CuzS solar cells have been carried out using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques. These studies indicate that the junction is fairly diffused in the as-prepared cell. However, heat treatment of the cell at 210°C in air relatively sharpens the junction and improves the cell performance. Using the Cu(2p3p)/S(2p) ratio as well as the Cu(LVV)/(LMM) Auger intensity ratio, it can be inferred that the nominal valency of copper in the layers above the junction is Cut and it is essentially in the CUSS form. Copper signals are observed from layers deep down in the cell. These seem to appear mostly from the grain boundary region. From the observed concentration of Cd, Cu and S in these deeper layers and the Cu(LVV)/(LMM) ratio it appears that the signals from copper essentially originate partly from copper in CuS and partly from Cu2t trapped in the lattice. It is significant to note that the nominal valence state of copper changes rather abruptly from Cut to Cuz+ across the junction.

Item Type: Journal Article
Publication: Journal Of Physics D-Applied Physics
Publisher: Institute of Physics
Additional Information: Copyright of this article belongs to Institute of Physics.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 03 Jul 2009 05:54
Last Modified: 03 Aug 2011 11:02
URI: http://eprints.iisc.ac.in/id/eprint/20671

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