Phonon renormalization in doped bilayer graphene

Das, A and Chakraborty, B and Piscanec, S and Pisana, S and Sood, AK and Ferrari, AC (2009) Phonon renormalization in doped bilayer graphene. In: Physical Review-B, 79 (15). pp. 155417-1.

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Abstract

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

Item Type:	Journal Article
Publication:	Physical Review-B
Publisher:	Ameriacan Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society.
Keywords:	conduction bands; doping; graphene; phonons; Raman spectra; valence bands
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	03 Jan 2010 09:33
Last Modified:	19 Sep 2010 05:33
URI:	http://eprints.iisc.ac.in/id/eprint/20545

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