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Pressure-Induced transitions in amorphous TlxSe100-x alloys

Parthasarathy, G and Asokan, S and Naik, GM and Krishna, Rama R (1987) Pressure-Induced transitions in amorphous TlxSe100-x alloys. In: Philosophical Magazine Letters, 56 (5). pp. 191-195.

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The electrical resistivity of bulk semiconducting amorphous TlxSe100-x alloys with 0 ≤ x ≤ 25 has been investigated up to a pressure of 14 GPa and down to liquidnitrogen temperature by use of a Bridgman anvil device. All the glasses undergo a discontinuous pressure-induced semiconducting-to-metal transition. X-ray diffraction studies on the pressure-recovered samples show that the high-pressure phase is the crystalline phase. The pressure-induced crystalline products are identified to be a mixture of Se having a hexagonal structure with a = 4·37 Aring and c = 4·95 Aring and TlSe having a tetragonal structure with a = 8·0 Aring and c = 7·0 Aring

Item Type: Journal Article
Publication: Philosophical Magazine Letters
Publisher: Taylor and Francis Group
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 12 Jan 2010 09:06
Last Modified: 22 Oct 2010 10:20
URI: http://eprints.iisc.ac.in/id/eprint/20335

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