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Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors

Bhatia, KL and Gosain, DP and Parthasarathy, G and Gopal, ESR (1986) Morphological structure of bismuth-doped n-type amorphous germanium sulphide semiconductors. In: Journal of materials science letters, 5 (12). 1281 -1284.

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Recent observation of n-type conduction in amorphous Ge20Ss_xBix at large bismuth concentrations (x = 11), which otherwise shows p-type conduction, has aroused considerable interest in the international scientific community [1]. The mechanism of such impurity incorporation in a germanium chalcogenide glass is not understood and is a topic of current interest. In our recent publications [2-10] we have brought to light some hitherto unknown and interesting features of bismuth dopants in chalcogen-rich Ge-X (X -- S, Se) glassy compositions. In this communication we present our new results of investigations on vitreous semiconductors Ge20S80 Bi using electron microscopy, electron diffraction of as-prepared and annealed/pressure quenched compositions. Our results provide conclusive support to the formation of composite clusters containing all the three elements, germanium, sulphur and bismuth, which crystallize in simpler stoichiometric compounds Bi2S3 and GeS2.

Item Type: Journal Article
Publication: Journal of materials science letters
Publisher: Springer
Additional Information: Copyright of this article belongs to Springer.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 04 Feb 2010 09:33
Last Modified: 19 Sep 2010 05:32
URI: http://eprints.iisc.ac.in/id/eprint/20309

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