Carrier mobility in polycrystalline semiconductors

Ram Kumar, K and Satyam, M (1981) Carrier mobility in polycrystalline semiconductors. In: Applied Physics Letters, 39 (11). pp. 898-900.

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Abstract

This letter presents a modified version of the grain boundary barrier model for polycrystalline semiconductors which takes into account the carrier transport in the bulk of the grain and the dynamic process of capture and release of free carriers by the grain boundary traps.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Keywords:	Semiconductor, Carrier Mobility, Polycrystals, Mathematical Models, Theoretical Data, Grain Boundaries, Potentials, Charge Transport, Traps, Charge Carriers.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	29 May 2009 06:14
Last Modified:	19 Sep 2010 05:31
URI:	http://eprints.iisc.ac.in/id/eprint/20147

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