Theoretical Optimization of Metal Para-Normal Silicon Schottky-Barrier Solar-Cell

Xavier, C Francis and Sevariraj, GA and Kumar, Vikram (1985) Theoretical Optimization of Metal Para-Normal Silicon Schottky-Barrier Solar-Cell. In: Pramana, 25 (5). pp. 587-596.

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Abstract

The theoretical optimization of the design parametersN A ,N D andW P has been done for efficient operation of Au-p-n Si solar cell including thermionic field emission, dependence of lifetime and mobility on impurity concentrations, dependence of absorption coefficient on wavelength, variation of barrier height and hence the optimum thickness ofp region with illumination. The optimized design parametersN D =5×1020 m−3,N A =3×1024 m−3 andW P =11.8 nm yield efficiencyη=17.1% (AM0) andη=19.6% (AM1). These are reduced to 14.9% and 17.1% respectively if the metal layer series resistance and transmittance with ZnS antireflection coating are included. A practical value ofW P =97.0 nm gives an efficiency of 12.2% (AM1).

Item Type:	Journal Article
Publication:	Pramana
Publisher:	Springer
Additional Information:	Copyright of this article belongs to Springer
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	09 Nov 2009 12:43
Last Modified:	19 Sep 2010 05:31
URI:	http://eprints.iisc.ac.in/id/eprint/20090

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