Palucha, Andrzej and Ghosh, Arindam (2009) Resistance Noise in Electrically Biased Bilayer Graphene. In: Physical Review Letter, 102 (12). pp. 126805-1.
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Official URL: http://prl.aps.org/abstract/PRL/v102/i12/e126805
Abstract
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene are strongly connected to its band structure and display a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization, and screening properties of bilayer graphene.
| Item Type: | Journal Article |
|---|---|
| Publication: | Physical Review Letter |
| Publisher: | American Physical Society |
| Additional Information: | Copyright of this artical belongs to American Physical Society. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 12 Jan 2010 07:45 |
| Last Modified: | 19 Sep 2010 05:30 |
| URI: | http://eprints.iisc.ac.in/id/eprint/19940 |
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