Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors

Baruah, Ratul Kumar and Mahapatra, Santanu (2009) Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors. In: 22nd International Conference on VLSI Design held with 8th International Conference on Embedded Systems, Jan, 05-09, 2009, New Delhi, India, pp. 241-246.

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Abstract

As the conventional MOSFET's scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible candidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point'' is introduced, which proves that the charge-based definition is more accurate than the potential based definition.The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by potential based definition while it is monotonous for charge based definition.The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current'' method or simply "TD'' method. The trend of threshold voltage variation is found same in both the cases which support charge-based definition.

Item Type:	Conference Paper
Series.:	International Conference on VLSI Design, Proceedings
Publisher:	IEEE
Additional Information:	Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	Double Gate (DG) MOSFET;Short channel effects;Threshold voltage.
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	29 May 2009 10:12
Last Modified:	19 Sep 2010 05:30
URI:	http://eprints.iisc.ac.in/id/eprint/19898

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