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Ion beam processing of oriented CuO films deposited on (100) YSZ by laser ablation

Lanke, UD and Vedawyas, M (1999) Ion beam processing of oriented CuO films deposited on (100) YSZ by laser ablation. In: Nuclear Instruments and Methods in Physics Research B, 155 (1-2). pp. 97-101.

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A systematic study of Ar ion implantation in cupric oxide films has been reported. Oriented CuO films were deposited by pulsed excimer laser ablation technique on (1 0 0) YSZ substrates. X-ray diffraction (XRD) spectra showed the highly oriented nature of the deposited CuO films. The films were subjected to ion bombardment for studies of damage formation, Implantations were carried out using 100 keV Arf over a dose range between 5 x 10(12) and 5 x 10(15) ions/cm(2). The as-deposited and ion beam processed samples were characterized by XRD technique and resistance versus temperature (R-T) measurements. The activation energies for electrical conduction were found from In [R] versus 1/T curves. Defects play an important role in the conduction mechanism in the implanted samples. The conductivity of the film increases, and the corresponding activation energy decreases with respect to the dose value.

Item Type: Journal Article
Publication: Nuclear Instruments and Methods in Physics Research B
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Implantation;Cupric oxide;Oriented;Laser ablation;Activation energy
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 27 Aug 2009 04:21
Last Modified: 19 Sep 2010 05:30
URI: http://eprints.iisc.ac.in/id/eprint/19864

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