Effect of spatial dispersion of the dielectric on the binding energy of D- ion in Si and Ge

Gayathri, V and Balasubramanian, S (1996) Effect of spatial dispersion of the dielectric on the binding energy of D- ion in Si and Ge. In: Physica B, 226 (04). pp. 351-354.

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Abstract

Using a multivalley effective mass theory, we obtain the binding energy of a D- ion in Si and Ge taking into account the spatial variation of the host dielectric function. We find that on comparison with experimental results the effect of spatial dispersion is important in the estimation of binding energy for the D- formed by As in Si and Ge. The effect is less significant for the case of D- formed by P and Sb donors.

Item Type:	Journal Article
Publication:	Physica B
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs ot Elsevier Science.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	02 Jun 2009 06:57
Last Modified:	19 Sep 2010 05:28
URI:	http://eprints.iisc.ac.in/id/eprint/19520

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