Kumar, AK and Laurila, T and Vuorinen, V and Paul, A (2009) Determination of diffusion parameters and activation energy of diffusion in V3Si phase with A15 crystal structure. In: Scripta Materialia, 60 (6). pp. 377-380.
![[img]](http://eprints.iisc.ac.in/style/images/fileicons/application_pdf.png) |
PDF
2.pdf - Published Version Restricted to Registered users only Download (219kB) | Request a copy |
Abstract
Diffusion such is the integrated diffusion coefficient of the phase, the tracer diffusion coefficient of species at different temperatures and the activation energy for diffusion, are determined in V3Si phase with A15 crystal structure. The tracer diffusion coefficient of Si Was found to be negligible compared to the tracer diffusion coefficient of V. The calculated diffusion parameters will help to validate the theoretical analysis of defect structure of the phase, which plays an important role in the superconductivity.
| Item Type: | Journal Article |
|---|---|
| Publication: | Scripta Materialia |
| Publisher: | Elsevier Science |
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Interdiffusion;Intermetallic;Superconductors;Metal silicide;Tracer diffusion. |
| Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 30 Apr 2009 04:37 |
| Last Modified: | 19 Sep 2010 05:28 |
| URI: | http://eprints.iisc.ac.in/id/eprint/19463 |
Actions (login required)
 |
View Item |
