Low-temperature electrical conductivity of LaNi1-xFexO3

Chainani, A and Sarma, DD and Das, I and Sampathkumaran, EV (1996) Low-temperature electrical conductivity of LaNi1-xFexO3. In: Journal of Physics-Condensed Matter, 8 (43). L631-L636.

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Abstract

We report the electrical conductivity between 2 and 300 K for LaNi1-xFexO3 across the composition-controlled metal-insulator (m-i) transition. Using a method first suggested by Mobius, we identify the critical concentration x(c) to be 0.3 for the m-i transition. The negative temperature coefficient of resistivity observed at low temperatures in the metallic phase follows a temperature dependence characteristic of disorder effects. The semiconducting compositions (x greater than or equal to 0.3) do not show a simple activation energy but exhibit variable-range hopping at high temperatures confirming that the m-i transition in this system is driven by increasing disorder effects.

Item Type:	Editorials/Short Communications
Publication:	Journal of Physics-Condensed Matter
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	12 Jan 2010 11:43
Last Modified:	19 Sep 2010 05:27
URI:	http://eprints.iisc.ac.in/id/eprint/19274

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