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Valley splitting in Si/Si1-xGex heterostructures

Balasubramanian, S and Venkataraman, V (1996) Valley splitting in Si/Si1-xGex heterostructures. In: Solid State Communications, 100 (07). pp. 525-528.

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We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: semiconductors;heterojunctions;electronic states (localized).
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 12 Jan 2010 11:28
Last Modified: 19 Sep 2010 05:27
URI: http://eprints.iisc.ac.in/id/eprint/19240

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