Balasubramanian, S and Venkataraman, V (1996) Valley splitting in Si/Si1-xGex heterostructures. In: Solid State Communications, 100 (07). pp. 525-528.
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Abstract
We show that the alloy disorder potential can be a possible cause for the valley splitting observed in the Si/Si1-xGex heterostructures at high magnetic fields and low electron densities.
Item Type: | Journal Article |
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Publication: | Solid State Communications |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier Science. |
Keywords: | semiconductors;heterojunctions;electronic states (localized). |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 12 Jan 2010 11:28 |
Last Modified: | 19 Sep 2010 05:27 |
URI: | http://eprints.iisc.ac.in/id/eprint/19240 |
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