Electrical resistivity behaviour of Ag-Ge-Te glasses under pressure at different temperatures: the influence of bonding and topological thresholds

Ramesh, K and Asokan, S and Sangunni, KS and Gopal, ESR (1999) Electrical resistivity behaviour of Ag-Ge-Te glasses under pressure at different temperatures: the influence of bonding and topological thresholds. In: Journal of Physics Condensed Matter, 11 (19). pp. 3897-3906.

PDF c91909.pdf - Published Version Restricted to Registered users only Download (148kB) | Request a copy

Abstract

The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a function of pressure at different temperatures in a Bridgman anvil set-up. The samples are found to exhibit a continuous decrease in electrical resistivity with pressure and metallization around 5 GPa. The pressure dependence of conductivity activation energy (Delta E) also confirms the continuous metallization of AgxGe15Te85-x glasses. The variation of Delta E with composition at different pressures has been found to exhibit anomalies at x = 5 and x = 18.5. A plausible explanation based on the bonding considerations, topological thresholds and density variations with composition has been provided to understand the conductivity activation energy of Ag-Ge-Te and other chalcogenide glasses.

Item Type:	Journal Article
Publication:	Journal of Physics Condensed Matter
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	02 Jun 2009 12:21
Last Modified:	19 Sep 2010 05:26
URI:	http://eprints.iisc.ac.in/id/eprint/19091

Actions (login required)

View Item