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Electrical resistivity and point contact studies on Al-Pd-Mn icosahedral quasicrystals

Gayathri, N and Goswami, R and Banerjee, S (1997) Electrical resistivity and point contact studies on Al-Pd-Mn icosahedral quasicrystals. In: Bulletin of Material Science, 20 (4). pp. 531-534.

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We report measurement of the electrical resistivity rho(T) and point contact differential conductance (dI/dV) for icosahedral Al70Pd30-xMnx (x = 7,9 and 11) at low temperatures. Below 10K, for x = 11, rho(T) follows a log T dependence. All the three compositions show a sharp minimum in the differential conductance near zero bias. Magnitude of the dip in the point contact conductance increases as the Mn concentration increases. The dip near zero bias also follows a log V dependence for V < 30 mV.

Item Type: Journal Article
Publication: Bulletin of Material Science
Publisher: Indian Academy of Sciences
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Keywords: Electrical resistivities;point contact studies;Al-Pd-Mn.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 02 Jun 2009 12:18
Last Modified: 19 Sep 2010 05:26
URI: http://eprints.iisc.ac.in/id/eprint/18922

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