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Evolution of spectral function in a doped Mott insulator: Surface vs bulk contributions

Maiti, K and Mahadevan, Priya and Sarma, DD (1998) Evolution of spectral function in a doped Mott insulator: Surface vs bulk contributions. In: Physical Review Letter, 80 (13). pp. 2885-2888.

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Official URL: http://prola.aps.org/abstract/PRL/v80/i13/p2885_1


We study the evolution of the spectral function with progressive hole doping in a Mott insulator, La1-xCaxVO3 with x = 0.0-0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter U/W is shown to describe consistently the spectral evolution.

Item Type: Journal Article
Publication: Physical Review Letter
Publisher: American Physical Society
Additional Information: Copyright of this article belongs to American Physical Society.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 17 Jul 2009 11:02
Last Modified: 19 Sep 2010 05:24
URI: http://eprints.iisc.ac.in/id/eprint/18636

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