Evolution of spectral function in a doped Mott insulator: Surface vs bulk contributions

Maiti, K and Mahadevan, Priya and Sarma, DD (1998) Evolution of spectral function in a doped Mott insulator: Surface vs bulk contributions. In: Physical Review Letter, 80 (13). pp. 2885-2888.

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Abstract

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, La1-xCaxVO3 with x = 0.0-0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter U/W is shown to describe consistently the spectral evolution.

Item Type:	Journal Article
Publication:	Physical Review Letter
Publisher:	American Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	17 Jul 2009 11:02
Last Modified:	19 Sep 2010 05:24
URI:	http://eprints.iisc.ac.in/id/eprint/18636

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