Photo-induced transformations in amorphous chalcogenide nano-multilayers

Kokenyesi, Sandor and Beke, Dezso L and Sangunni, Kanatinkal S and Takats, Viktor and Csik, Attila and Daroczi, Lajos (2009) Photo-induced transformations in amorphous chalcogenide nano-multilayers. In: Journal of Materials Science: Materials in Electronics, 20 (Suppl.). pp. 107-110.

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Abstract

Photo-stimulated interdiffusion in $a-Se/As_2S_3$ amorphous chalcogenide nano-multilayers (ANML) is known as a useful method for amplitude-phase optical relief formation besides the known amorphous–amorphous or amorphous–crystalline photo-induced structural transformations (PST) in homogeneous chalcogenide layers, but it has a relatively narrow sensitivity spectral range and small amplitude modulation. Experimental evidences of improvement of optical recording processes were obtained in Te-, Bi-, Sb-containing nano-layered structures based on $As_2S_3$ matrix. The influence of nano-structuring and combination of components on the sensitivity, type of the recorded relief is discussed.

Item Type:	Journal Article
Publication:	Journal of Materials Science: Materials in Electronics
Publisher:	Springer
Additional Information:	Copyright of this article belongs to Springer.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Nov 2009 04:45
Last Modified:	19 Sep 2010 05:24
URI:	http://eprints.iisc.ac.in/id/eprint/18630

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