Growth and characterization of indium antimonide and gallium antimonide crystals

Udayashankar, NK and Bhat, HL (2001) Growth and characterization of indium antimonide and gallium antimonide crystals. In: Bulletin of Materials Science, 24 (5). pp. 445-453.

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Abstract

Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

Item Type:	Journal Article
Publication:	Bulletin of Materials Science
Publisher:	Indian Academy of Sciences
Additional Information:	The copyright of this article belongs to Indian Academy of Sciences.
Keywords:	Synthesis;crystallization;chemical etching;defect density;Hall measurements;photoluminescence (PL) spectra
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	16 Sep 2004
Last Modified:	19 Sep 2010 04:16
URI:	http://eprints.iisc.ac.in/id/eprint/1860

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