Conductance fluctuations near the Anderson transition

Ghosh, Arindam and Raychaudhuri, AK (1999) Conductance fluctuations near the Anderson transition. In: Journal of Physics-Condensed Matter, 11 (41). L457-L462.

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Abstract

In this letter we report measurements of conductance fluctuations in single-crystal samples of Si doped with P and B close to the critical composition of the metal-insulator transition (n(c) approximate to 4 x 10(18) cm(-3)). The measurements show that the noise, which arises from bulk sources, does not diverge as the loffe-Regal limit (k(F)l --> 1) is approached from the metallic side. At room temperature, the magnitude of the noise shows a shallow maximum at around k(F)l approximate to 1.5 and drops sharply as the insulating state is approached.

Item Type:	Journal Article
Publication:	Journal of Physics-Condensed Matter
Publisher:	IOP Publishing
Additional Information:	Copyright of this article belongs to IOP Publishing.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	05 Mar 2009 05:06
Last Modified:	19 Sep 2010 05:00
URI:	http://eprints.iisc.ac.in/id/eprint/18249

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