Murugavel, S and Asokan, S (1999) Composition dependence of electrical properties of Al-Te glasses. In: Journal of Non-Crystalline Solids, 249 (2-3). pp. 145-149.
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Abstract
The electrical resistivity of binary AlxTe100-x glasses of different compositions (17 less than or equal to x less than or equal to 30), is measured as a function of temperature in the range 300-180 K. The conductivity activation energy (Delta E), estimated from the resistivity variation with temperature, is found to decrease with increasing Al content and to exhibit a minimum at x = 24 at.% of Al. The initial decrease in Delta E has been explained on the basis of the creation of additional positively charged defect states due to the tetrahedral and octahedral coordinations of Al atoms. The presence of these additional defect centers causes an upset in the balance between the oppositely charged defect states, which subsequently shifts the Fermi level towards the valence band. The increase in activation energy with composition above x = 24 has been attributed to the saturation of these extra charged defect states.
Item Type: | Journal Article |
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Publication: | Journal of Non-Crystalline Solids |
Publisher: | Elsevier Science BV |
Additional Information: | Copyright of this article belongs to Elsevier Science BV. |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 02 Mar 2009 08:33 |
Last Modified: | 19 Sep 2010 05:00 |
URI: | http://eprints.iisc.ac.in/id/eprint/18221 |
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