High-pressure structure and electronic transport in hole-doped La3/4Ca1/4MnO3 perovskites

Meneghini, C and Levy, D and Mobilio, S and Ortolani, M and Nunez-Reguero, M and Kumar, A and Sarma, DD (2002) High-pressure structure and electronic transport in hole-doped La3/4Ca1/4MnO3 perovskites. In: PHYSICAL REVIEW, 65 (012111). 012111-1-012111-4.

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Abstract

The structure and electronic transport properties of hole-doped La(3/4)Cat(1/4)MnO(3) perovskite have been investigated as a function of pressure up to about 15 GPa. Though the applied pressure enhances the electrical conductivity, the high-pressure resistivity data point out a competing mechanism interfering with the pressure-induced charge delocalization that prevent the system from reaching a fully metallic state around room temperature. X-ray diffraction results reveal unexpected structural modifications with increasing pressure that can be interpreted with changes in the coherence length of the Jahn-Teller distortions.

Item Type:	Journal Article
Publication:	PHYSICAL REVIEW
Publisher:	American Physical Society
Additional Information:	Copyright of this article belongs to American Physical Society.
Keywords:	Metal-Insulator-Transition;Colossal-Magnetoresistance;Manganese Perovskites;Double-Exchange;La1-Xsrxmno3;Manganites;Distortions;Scattering;Crossover;Polarons
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	12 Aug 2009 06:24
Last Modified:	19 Sep 2010 04:59
URI:	http://eprints.iisc.ac.in/id/eprint/17918

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