Temperature-Dependent Photoluminescence In Er-Doped Ge-S-Ga Glasses

Ivanova, ZG and Tonchev, D and Ganesan, R and Gopal, ESR and Kasap, SO (2005) Temperature-Dependent Photoluminescence In Er-Doped Ge-S-Ga Glasses. In: 2nd International Workshop on Amorphous and Nanostructures Chalcogenides, JUN 20-24, 2005, Sinaia, ROMANIA, pp. 1863-1867.

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Abstract

In the present report, we have investigated the influence of the temperature on the photoluminescence (PL) in (GeS2)(80)(Ga2S3)(20) glassy host doped with Er of 0.17, 0.35 and 1.05 at %. In particular, excitation wavelengths of 532 and 514.5 nm, corresponding to absorption predominantly in the host material, have been chosen. A broad PL band centered at similar to 1540 nm has been obtained, which relates to the I-4(15/2) -> I-4(13/2) transition in the energy Stark splitting diagram of Er3+ state. A narrowing effect of the emission cross-section with decreasing temperature down to 4.2 K has been observed, which leads to the improved PL efficiency. The role of erbium concentration on the PL intensity of the glasses studied has been evaluated. The distribution and changes of the basic structural units have been specified by Raman scattering in the range of 50-550 cm(-1).

Item Type:	Conference Paper
Publication:	Journal of Optoelectronics and Advanced Materials
Publisher:	National Institute Optoelectronics
Additional Information:	Copyright of this article belongs to National Institute Optoelectronics.
Keywords:	Ge-S-Ga glass;Er3+ emission;low-temperature photoluminescence;Raman scattering.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	10 Feb 2010 08:20
Last Modified:	19 Sep 2010 04:56
URI:	http://eprints.iisc.ac.in/id/eprint/17404

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