Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal-insulator transition

Raychaudhuri, AK and Kar, Swastik and Ghosh, Arindam (2003) Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metal-insulator transition. In: Physica E: Low-dimensional Systems and Nanostructures, 18 (1-3). pp. 284-285.

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Abstract

We present results of 1/f noise measurements at low frequency (10(-3) < f < 10 Hz) and at low temperatures (1 K < T < 20 K) in single crystals of Si doped with P and B. The doping concentration n is close to the critical composition n, of the metal-insulator transition (MIT). We observed that the noise which originates from the universal conductance fluctuation, can be suppressed effectively by an electric field of moderate magnitude at T < 20 K. Near the critical region of MIT (n approximate to n(c)) the suppression is extremely large. We show that this effect can originate by dephasing arising from an electric field in presence of electron-electron interaction.

Item Type:	Journal Article
Publication:	Physica E: Low-dimensional Systems and Nanostructures
Publisher:	Elsevier Science B.V
Additional Information:	Copyright of this article belongs to Elsevier Science B.V.
Keywords:	Universal conductance fluctuations;Decoherence;Electron–electron interactions.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	27 Nov 2009 06:54
Last Modified:	19 Sep 2010 04:56
URI:	http://eprints.iisc.ac.in/id/eprint/17383

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