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Low-temperature luminescence quenching and local ordering study of Er-doped Ge-S-Ga glasses

Ivanova, ZG and Ganesan, R and Adarsh, KV and Vassilev, VS and Aneva, Z and Cernosek, Z and Gopal, ESR (2005) Low-temperature luminescence quenching and local ordering study of Er-doped Ge-S-Ga glasses. In: Journal of Optoelectronics and Advanced Materials, 7 (1). pp. 345-348.

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Photoluminescence (PL) spectroscopy by excitation with 514.5 nm light at 4.2 and 77 K is applied to (GeS2)(80)(Ga2S3)(20): x mol % Er2S3 (x=0.3, 0.6, 0.9, 1.8, 2.1 and 2.4) glasses. The compositional dependence of the PL intensity is determined, and a quenching effect accompanied by the strongest absorption at 1.22 at % Er is established. The influence of temperature on the emission cross-section is investigated by deconvolution of the experimental spectra, and the observed fine features are explained on the basis of the energy level diagram of Er3+ ions. The distribution and changes of the structural units at higher Er concentrations are specified by Raman scattering, in the range 50-550 cm(-1).

Item Type: Journal Article
Publication: Journal of Optoelectronics and Advanced Materials
Publisher: Natl Inst Optoelectronics
Additional Information: Copyright of this article belongs to Natl Inst Optoelectronics.
Keywords: Chalcogenide glasses;Er-doping;Low-temperature luminescence; Ge-S-Ga glass
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 09 Feb 2010 12:36
Last Modified: 29 Feb 2012 05:30
URI: http://eprints.iisc.ac.in/id/eprint/17211

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