Low-pressure metal-organic CVD of transparent and p-type conducting CuCrO2 thin films with high conductivity

Mahapatra, S and Shivashankar, SA (2003) Low-pressure metal-organic CVD of transparent and p-type conducting CuCrO2 thin films with high conductivity. In: Chemical Vapor Deposition, 9 (5). pp. 238-240.

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Abstract

Communication: The growth of CuCrO2 films on glass substrate by LP-MOCVD is reported. Unlike nearly all transparent conducting oxides which exhibit only n-type conductivity, CuCrO2 crystalline thin films deposited from Cu(acac)(2) and Cr(acac)(3) precursors exhibit positive Hall co-efficient with the highest carrier Hall mobility reported to date for any p-type transparent conducting oxide based on Cu-delafossite structure. The deposition, performed at 823 K, grows at a rate of 13 nm min(-1). XRD analysis indicates diffraction peaks corresponding to the (101), (012), (104), and (110) planes. The direct optical bandgap is calculated to be 3.08 eV.

Item Type:	Journal Article
Publication:	Chemical Vapor Deposition
Publisher:	Wiley-V CH Verlag
Additional Information:	Copyright of this article belongs to Wiley-V CH Verlag
Keywords:	Chromates;Conductivity;Copper;LP-MOCVD.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	24 Nov 2009 06:52
Last Modified:	19 Sep 2010 04:55
URI:	http://eprints.iisc.ac.in/id/eprint/17102

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