Sardar, Kripasindhu and Raju, AR and Subbanna, GN (2003) Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method. In: Solid State Communications, 125 (6). pp. 355-358.
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Abstract
Thin films of GaN have been successfully deposited on Al2O3 (0001) substrates by the sol-gel technique. The method, in addition to being is simple and cost-effective, results in epitaxial films. The films have been characterized by photoluminescence spectroscopy.
| Item Type: | Journal Article |
|---|---|
| Publication: | Solid State Communications |
| Publisher: | Elsevier Science |
| Additional Information: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | semiconductors;thin films;chemical synthesis;luminescence. |
| Department/Centre: | Division of Chemical Sciences > Materials Research Centre Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
| Date Deposited: | 15 Jul 2009 11:12 |
| Last Modified: | 19 Sep 2010 04:54 |
| URI: | http://eprints.iisc.ac.in/id/eprint/16880 |
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