Mohanty, T and Mishra, NC and Singh, F and Bhat, SV and Kanjilal, D (2003) Color center formation in sapphire by swift heavy ion irradiation. In: Radiation Measurements, 36 (1-6). pp. 723-727.
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Abstract
Single crystals of sapphire$ (\propto-Al_{2}O_{3}) $were irradiated at room temperature with 100 and 190 MeV silver (Ag) ions from theb 15 UD Pelletron at the Nuclear Science Centre, New Delhi. The pristine as well as irradiated sapphires are characterized by photoluminescence at room temperature under 2.8 eV blue excitation by a He–Cd laser, ultraviolet (UV)–Visible absorption and electron paramagnetic resonance (EPR). Photoluminescence studies show a peak at 2:2 eV, due to formation of a$ F_{2}^{2}+$ center. The intensity of this peak increases with =uence. A sudden increase in peak intensity has been observed after$ 5*10^{12} ions=cm^{2}$ where the defect zones started overlapping due to multiple ion impact. UV-Visible and EPR studies show formation of defects like F and $F^{+ }$centers.
Item Type: | Journal Article |
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Publication: | Radiation Measurements |
Publisher: | Elsevier Science |
Additional Information: | Copyright of this article belongs to Elsevier science |
Keywords: | Sapphire; Irradiation; Color center; Luminescence; Absorption |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 27 Nov 2008 11:10 |
Last Modified: | 19 Sep 2010 04:53 |
URI: | http://eprints.iisc.ac.in/id/eprint/16660 |
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