Investigations on multimagnetron sputtered $Zn_{1-x}Mg_xO$ thin films through metal-ferroelectric-semiconductor configuration

Dhananjay, * and Nagaraju, J and Krupanidh, SB (2008) Investigations on multimagnetron sputtered $Zn_{1-x}Mg_xO$ thin films through metal-ferroelectric-semiconductor configuration. In: Journal of Applied Physics, 104 (4). pp. 3510-1.

PDF GetPDFServlet.pdf - Published Version Restricted to Registered users only Download (443kB) | Request a copy

Abstract

The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties. $Zn_{1-x}Mg_xO$ (0< x <0.3) thin films were deposited on Si (100) and corning glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at $110^oC$. The $Zn_{0.7}Mg_{0.3}O$ thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of $0.2 \mu C/cm^2$ and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3–3.8 eV for x=0–0.3. The average transmittance of the films was higher than 90% in the wavelength region $\lambda = 400-900 nm$.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Chemical Sciences > Materials Research Centre
Date Deposited:	25 Nov 2008 05:37
Last Modified:	19 Sep 2010 04:51
URI:	http://eprints.iisc.ac.in/id/eprint/16286

Actions (login required)

View Item