Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

Kumar, Anil R and Suresh, MS and Nagaraju, J (2000) Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications. In: Solar Energy Materials and Solar Cells, 60 (2). pp. 155-166.

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Abstract

The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1.

Item Type:	Journal Article
Publication:	Solar Energy Materials and Solar Cells
Publisher:	Elsevier
Additional Information:	Copyright of this article belongs to Elsevier
Keywords:	Solar cells;AC parameters;Measurement.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	23 Oct 2008 06:34
Last Modified:	15 Oct 2010 09:56
URI:	http://eprints.iisc.ac.in/id/eprint/16261

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