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Strain, luminescence, and electrical properties of $Zn_{1-x}Mn_xS$ nanocrystalline films prepared on silicon wafers

Reddy, Sreekantha D and Kang, B and Yu, SC and Gunasekhar, KR and Rao, Narasimha K and Reddy, Sreedhara P (2008) Strain, luminescence, and electrical properties of $Zn_{1-x}Mn_xS$ nanocrystalline films prepared on silicon wafers. In: Journal of Applied Physics, 104 (1). 013532-1-013532-6.

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Nanocrystalline $Zn_{1−x}Mn_xS$ films (0 \leq x \leq 0.25) were deposited on silicon wafers at 473 K using a simple resistive thermal evaporation technique. Morphological and structural measurements revealed that all the films investigated were nanocrystalline with a cubic structure. The lattice parameter increased linearly with Mn concentration. The surface roughness of all the films was shown to be in the range 1.2–3.5 nm. A blueshift in the photoluminescence was observed in the films with increasing Mn concentration along with an intense ultraviolet emission and orange-yellow emission, which are ascribed to the quantum confinement effect. The composition had a significant influence on the orange-yellow emission intensity as well as peak positions. The excitation wavelength of all the samples was 330 nm and emission wavelengths were observed around 410–560 nm. The presence of many recombination sites, surface areas, and defect types leads to broad band photoluminescence emission lines instead of sharp bands. The electrical resistivity as well as activation energy decreased with increasing Mn concentration.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 26 Aug 2008
Last Modified: 19 Sep 2010 04:49
URI: http://eprints.iisc.ac.in/id/eprint/15571

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