Hemambar, C and Rao, Srinivasa B and Jayaram, V (2001) Al-SiC electronic packages with controlled thermal expansion coefficient by a new method of pressureless infiltration. In: Materials and Manufacturing Processes, 16 (6). pp. 779-788.
Full text not available from this repository. (Request a copy)Abstract
A method is described whereby SiC preforms may be infiltrated in air by a molten aluminum alloy to yield a metal matrix composite with thermal expansion coefficients that are suitable or electronic packaging, such as in microwave integrated circuits. Crucible geometries and infiltration conditions may be designed to provide inexpensive and reusable containers and useful section thicknesses in \sim 1 hr. Intricate geometries may be fabricated in the green state of the ceramic, prior to infiltration, thereby minimizing final machining of the composite.
| Item Type: | Journal Article |
|---|---|
| Publication: | Materials and Manufacturing Processes |
| Publisher: | Taylor and Francis |
| Additional Information: | Copyright of this article belongs to Taylor and Francis. |
| Keywords: | AlSiC;Al-SiC composites;Electronic packaging;Low thermal expansion coefficient;Metal matrix composites;Near-net-shape fabrication;Pressureless infiltration. |
| Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 11 Aug 2008 |
| Last Modified: | 27 Aug 2008 13:42 |
| URI: | http://eprints.iisc.ac.in/id/eprint/15526 |
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