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Synthesis and Characterization of Nanocrystalline SnS Films Grown by Thermal Evaporation Technique

Devika, M and Reddy, Koteeswara N and Reddy, Sreekantha D and Ahsanulhaq, Q and Ramesh, K and Gopal, ESR and Gunasekhar, KR and Hahn, YB (2008) Synthesis and Characterization of Nanocrystalline SnS Films Grown by Thermal Evaporation Technique. In: Journal of The Electrochemical Society, 155 (2). H130-H135.

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The SnS films were grown on glass substrates using the thermal evaporation technique at different substrate temperatures $(T_s)$ varied from 20 to $300 ^0C$, and their physical properties were studied with appropriate techniques. While increasing $T_s$, the sulfur content in the films decreased and the Sn to S atomic percent ratio increased from 1.01 to 1.42. The structural studies showed that most of the crystallites in the films were grown along [111] direction and their grain size increased between \sim 18 and 41 nm with the increase of $T_s$. The SnS films grown at $T_s$ = $300 ^0C$ exhibited considerably low electrical resistivity of \sim 43 \Omega cm with an average grain size of \sim 40 nm. These films also exhibited a direct optical bandgap of \sim 2.0 eV with a high absorption coefficient, $\sim 10^6 cm^{-1}$. These results indicate that the physical properties of nanocrystalline SnS films are comparable to the properties of bulk as well as microstructured SnS films and are suitable for photovoltaic or nanoquantum-well device applications.

Item Type: Journal Article
Publication: Journal of The Electrochemical Society
Publisher: Electrochemical Society
Additional Information: Copyright of this article belongs to Electrochemical Society.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 06 Aug 2008
Last Modified: 19 Sep 2010 04:48
URI: http://eprints.iisc.ac.in/id/eprint/15398

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