A study of ferroelectric thin films deposited on a $LaNiO_3$ barrier electrode by nebulized spray pyrolysis

Murugavel, P and Sharma, Rajat and Raju, AR and Rao, CNR (2000) A study of ferroelectric thin films deposited on a $LaNiO_3$ barrier electrode by nebulized spray pyrolysis. In: Journal of Physics D-Applied Physics, 33 (8). pp. 906-911.

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Abstract

Thin films of ferroelectric $PbTiO_3$ (PT) and $Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZT) as well as antiferroelectric $PbZrO_3$ (PZ) have been prepared on $LaNiO_3/SiO_2/Si$ substrates by nebulized spray pyrolysis (NSP) of metal-organic precursors. The metallic $LaNiO_3$ (LNO) electrode layer was also deposited by NSP. The ferroelectric films obtained show satisfactory morphology and desirable dielectric properties. Typical values of the coercive field, remnant polarization and dielectric constant (300 K) for the $PT/LNO/SiO_2/Si$ film are 170 kV $cm^{-1}$, 22 \mu C $cm^{-2}$ and 210, respectively, with the corresponding values for the $PZT/LNO/SiO_2/Si$ film being 120 kV $cm^{-1}$, 13 \mu C $cm^{-2}$ and 540, respectively. The $PZ/LNO/SiO_2/Si$ film shows typical antiferroelectric characteristics including the electric-field induced reversible antiferroelectric—ferroelectric transition. The various films deposited on $LNO/SiO_2/Si$ by NSP are comparable in all respects to those prepared on $Pt/Ti/SiO_2/Si$ by the same technique.

Item Type:	Journal Article
Publication:	Journal of Physics D-Applied Physics
Publisher:	Institute of Physics
Additional Information:	Copyright of this article belongs to Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	31 Jul 2008
Last Modified:	19 Sep 2010 04:48
URI:	http://eprints.iisc.ac.in/id/eprint/15355

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