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High-mobility molybdenum doped indium oxide thin films prepared by spray pyrolysis technique

Parthiban, S and Ramamurthi, K and Elangovan, E and Martins, R and Fortunato, E and Ganesan, R (2008) High-mobility molybdenum doped indium oxide thin films prepared by spray pyrolysis technique. In: Materials Letters, 62 (17-18). pp. 3217-3219.

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Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450°C by spray pyrolysis technique.The Mo doping was varied between 0 and 2.0 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite $In_2o_3$ with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2 at.%. The film deposited with 0.5 at.% Mo doping shows high mobility of 76.9 $cm^2V^{-1}s^{-1}$, resistivity of $1.8\times10^{-3}\Omega-cm$ and high carrier concentration of $4.6\times10^{19}$ $cm^{-3}$ with 81.3% transmittance in the visible range between 500 and 800 nm. Further, the transparency extents well into the near-IR range.

Item Type: Journal Article
Publication: Materials Letters
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Semiconductor;Electrical properties;Thin films;Transparent oxide;Indium oxide;Optical materials and properties.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 17 Jul 2008
Last Modified: 19 Sep 2010 04:47
URI: http://eprints.iisc.ac.in/id/eprint/15067

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