Doping in Carbon Nanotubes Probed by Raman and Transport Measurements

Das, Anindya and Sood, AK and Govindaraj, A and Saitta, Marco A and Lazzeri, Michele and Mauri, Francesco and Rao, CNR (2007) Doping in Carbon Nanotubes Probed by Raman and Transport Measurements. In: Physical Review Letters, 99 (13). 136803-1-136803-4.

PDF Raman.pdf Restricted to Registered users only Download (678kB) | Request a copy

Abstract

In situ Raman experiments together with transport measurements have been carried out on carbon nanotubes as a function of gate voltage. In metallic tubes, a large increase in the Raman frequency of the $G^-$ band, accompanied by a substantial decrease of its linewidth, is observed with electron or hole doping. In addition, we see an increase in the Raman frequency of the $G^+$ band in semiconducting tubes. These results are quantitatively explained using ab initio calculations that take into account effects beyond the adiabatic approximation. Our results imply that Raman spectroscopy can be used as an accurate measure of the doping of both metallic and semiconducting nanotubes.

Item Type:	Journal Article
Publication:	Physical Review Letters
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Jul 2008
Last Modified:	19 Sep 2010 04:47
URI:	http://eprints.iisc.ac.in/id/eprint/14913

Actions (login required)

View Item