Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique

Gupta, DS and Chandra, MM and Kumar, V (1983) Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique. In: Physica Status Solidi A, 80 (2). K209-K211.

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Abstract

The interface states at the $Si-Si0_2$ interface are characterized by their distribution in the energy band gap and capture cross-sections for electrons and holes.

Item Type:	Journal Article
Publication:	Physica Status Solidi A
Publisher:	John Wiley & Sons, Inc.
Additional Information:	Copyright of this article belongs to John Wiley & Sons, Inc.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 Jun 2008
Last Modified:	19 Sep 2010 04:46
URI:	http://eprints.iisc.ac.in/id/eprint/14642

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