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Deep levels related to ion-implanted tellurium in silicon

Kalyanaraman, V and Chandra, Mohan M and Kumar, Vikram (1983) Deep levels related to ion-implanted tellurium in silicon. In: Journal of Applied Physics, 54 (11). pp. 6417-6420.

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Deep impurity levels due to ion-implanted Te in n-Si are studied. Two donor levels at $E_c$ - 0.13 and $E_c$ - 0.56 eV are obtained by using deep level transient spectroscopy. Thermal electron capture cross sections for both levels are too large to be measured. Electron photoionization cross section spectrum confirms the $E_c$ - 0.56 level and also reveals an excited state 0.45 eV above the ground state.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 04 Jul 2008
Last Modified: 19 Sep 2010 04:46
URI: http://eprints.iisc.ac.in/id/eprint/14580

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