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Abstract
A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temperature variations of PL peak position and intensity have been used to find the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and excitons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their position and PL efficiency have been studied.
Item Type: | Journal Article |
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Publication: | Applied Physics A: Materials Science & Processing |
Publisher: | Springer |
Additional Information: | Copyright of this article belongs to Springer. |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 24 Jun 2008 |
Last Modified: | 19 Sep 2010 04:46 |
URI: | http://eprints.iisc.ac.in/id/eprint/14545 |
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