Pressure Dependence of Barrier Heights of Schottky Contacts on Silicon

Balasubramanyam, N and Kumar, Vikram (1987) Pressure Dependence of Barrier Heights of Schottky Contacts on Silicon. In: Physica Status Solidi A: Applied Research, 101 (1). K29-K32.

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Abstract

Recently there has been considerable interest in the pressure dependence of barrier heights of metal (Schottky) contacts /1/ and electrolyte interfaces /2,3/ with compound semiconductors. It has been shown that the pressure dependence of the barrier heights reflects the electronic structure and the ionic nature of the semiconductor under study. In this note, we report the results of a study of the pressure dependence of I-U characteristics of Schottky barriers on both n- and p-type silicon.

Item Type:	Journal Article
Publication:	Physica Status Solidi A: Applied Research
Publisher:	John Wiley & Sons
Additional Information:	Copyright of this article belongs to John Wiley & Sons.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	17 Jun 2008
Last Modified:	19 Sep 2010 04:46
URI:	http://eprints.iisc.ac.in/id/eprint/14426

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