Characterization of surface states in MOS capacitors by a modified DLTS technique

Kumar, V and Iyer, SB (1983) Characterization of surface states in MOS capacitors by a modified DLTS technique. In: Physica Status Solidi A: Applied Research, 76 (2). pp. 637-640.

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Abstract

A modified deep-level transient spectroscopic (DLTS) technique for characterizing the surface states in MOS structures is proposed. It involves scanning the bias while applying small filling pulses at const. temp. The surface states behave as discrete levels when the pulses are small. Results on a $Cu/SiO_2/p-Si$ tunnel diode are presented as an example.

Item Type:	Journal Article
Publication:	Physica Status Solidi A: Applied Research
Publisher:	Akademie Verlag
Additional Information:	Copyright of this article belongs to Akademie Verlag
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 Jun 2008
Last Modified:	19 Sep 2010 04:46
URI:	http://eprints.iisc.ac.in/id/eprint/14407

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