Panin, GN and Dutta, PS and Piqueras, J and Dieguez, E (1995) p- to n-type conversion in GaSb by ion beam milling. In: Applied Physics Letters, 67 (24). pp. 3584-3586.
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Abstract
Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native acceptors originally present in the as-grown samples.
Item Type: | Journal Article |
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Publication: | Applied Physics Letters |
Publisher: | American Institute of Physics |
Additional Information: | Copyright belongs to American Institute of Physics |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 13 Jun 2008 |
Last Modified: | 19 Sep 2010 04:45 |
URI: | http://eprints.iisc.ac.in/id/eprint/14315 |
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