Irradiation effects on domain dynamics in ferroelectric glycine phosphite

Vanishri, S and Reddy, Babu JN and Bhat, HL (2007) Irradiation effects on domain dynamics in ferroelectric glycine phosphite. In: Journal of Applied Physics, 101 (5). 054106-1-054106-5.

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Abstract

The effect of x-ray irradiation on polarization switching properties of a glycine phosphite (GPI) single crystal is investigated using the Merz technique. GPI undergoes a paraelectric to ferroelectric phase transition at 224.7 K. Switching studies were performed in the temperature range of 173–221 K with the applied field varying from 1.1 to 4.9 kV/cm. X-ray irradiation causes an increase in the threshold field below which switching could not occur. The activation energy for the domain wall motion is found to increase with irradiation from 0.12 eV for a pristine sample to 0.34 eV after irradiating it for 20 min. The temperature dependence of domain wall mobility shows an unusual behavior with the radiation dosage. The calculated domain wall mobility increases with the exposure time, which is contrary to expectation. This apparent increase in mobility with exposure time is attributed to the creation of a large number of radiation induced defects, identified as $PO_3^{2-}$ radicals, resulting in the loss of effective switchable volume of the sample.

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 May 2008
Last Modified:	19 Sep 2010 04:45
URI:	http://eprints.iisc.ac.in/id/eprint/14131

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