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Characterization of deep levels in semi-insulating gallium arsenide

Mohapatra, YN and Balasubramanyam, N and Kumar, Vikram (1985) Characterization of deep levels in semi-insulating gallium arsenide. In: Bulletin of Materials Science, 7 (1). pp. 57-61.

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Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insulating GaAs:Cr through optical transient current spectroscopy (OTCS) in the temperature range 300-450 K. The latter trap gives rise to rising current transients, which result in a negative peak in the OTCS spectrum. The theoretical expressions for current transients have been derived.

Item Type: Journal Article
Publication: Bulletin of Materials Science
Publisher: Springer India
Additional Information: Copyright of this article belongs to Springer.
Keywords: Gallium arsenide;deep levels;activation energy;current transients;optical transient current spectroscopy.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Apr 2008
Last Modified: 27 Aug 2008 13:19
URI: http://eprints.iisc.ac.in/id/eprint/13699

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