Mohapatra, YN and Balasubramanyam, N and Kumar, Vikram (1985) Characterization of deep levels in semi-insulating gallium arsenide. In: Bulletin of Materials Science, 7 (1). pp. 57-61.
Full text not available from this repository. (Request a copy)Abstract
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insulating GaAs:Cr through optical transient current spectroscopy (OTCS) in the temperature range 300-450 K. The latter trap gives rise to rising current transients, which result in a negative peak in the OTCS spectrum. The theoretical expressions for current transients have been derived.
| Item Type: | Journal Article |
|---|---|
| Publication: | Bulletin of Materials Science |
| Publisher: | Springer India |
| Additional Information: | Copyright of this article belongs to Springer. |
| Keywords: | Gallium arsenide;deep levels;activation energy;current transients;optical transient current spectroscopy. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 11 Apr 2008 |
| Last Modified: | 27 Aug 2008 13:19 |
| URI: | http://eprints.iisc.ac.in/id/eprint/13699 |
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