Minority Carrier Lifetime in Polycrystalline Semiconductors

Kumar, Ram K and Satyam, M (1983) Minority Carrier Lifetime in Polycrystalline Semiconductors. In: Physica Status Solidi A: Applied Research, 77 (2). pp. 467-470.

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Abstract

A model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials.

Item Type:	Journal Article
Publication:	Physica Status Solidi A: Applied Research
Publisher:	Wiley InterScience
Additional Information:	Copyright of this article belongs to Wiley InterScience
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering > Electrical Communication Engineering - Technical Reports
Date Deposited:	10 Apr 2008
Last Modified:	19 Sep 2010 04:44
URI:	http://eprints.iisc.ac.in/id/eprint/13656

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