Realistic tight-binding model for the electronic structure of II-VI semiconductors

Sapra, Sameer and Shanthi, N and Sarma, DD (2002) Realistic tight-binding model for the electronic structure of II-VI semiconductors. In: Physical Review B, 66 . pp. 205202-1.

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Abstract

We analyze the electronic structure of group II-VI semiconductors obtained within linearized muffin-tin-orbital approach in order to arrive at a realistic and minimal tight-binding model, parametrized to provide an accurate description of both valence and conduction bands. It is shown that a nearest-neighbor sp3 d5 model is fairly sufficient to describe the electronic structure of these systems over a wide energy range, obviating the use of any fictitious s* orbital. The obtained hopping parameters obey the universal scaling law proposed by Harrison, ensuring transferability to other systems. Furthermore, we show that certain subtle features in the bonding of these compounds require the inclusion of anion-anion interactions in addition to the nearest-neighbor cation-anion interactions.

Item Type:	Journal Article
Publication:	Physical Review B
Publisher:	American Physical Society
Additional Information:	Copyright for this article belongs to American Physical Society (APS)
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	18 Jan 2007
Last Modified:	19 Sep 2010 04:14
URI:	http://eprints.iisc.ac.in/id/eprint/1357

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